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| 型号： | NTB5605P |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 18.5A D2PAK |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 18.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 140 毫欧 @ 8.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1190pF @ 25V |
| 功率 - 最大： | 88W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTB5605P, NTBV5605
Power MOSFET
-60 V, -18.5 A
P ? Channel, D 2 PAK
Features
? Designed for Low R DS(on)
? Withstands High Energy in Avalanche and Commutation Modes
? AEC Q101 Qualified ? NTBV5605
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Power Supplies
? PWM Motor Control
? Converters
? Power Management
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
? 60 V
G
http://onsemi.com
R DS(on) TYP
120 m W @ ? 5.0 V
P ? Channel
D
S
I D MAX
? 18.5 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 60
Unit
V
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate ? to ? Source Voltage
Continuous Drain Steady T A = 25 ° C
Current (Note 1) State
Power Dissipation Steady T A = 25 ° C
(Note 1) State
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 25 V, V GS = 5.0 V, I PK = 15 A,
L = 3.0 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
THERMAL RESISTANCE RATINGS
V GS
I D
P D
I DM
T J ,
T STG
E AS
T L
$ 20
? 18.5
88
? 55
? 55 to
175
338
260
V
A
W
A
° C
mJ
° C
1
2
3
D 2 PAK
CASE 418B
STYLE 2
x
A
Y
WW
G
4
4
Drain
NTB5605xG
AYWW
1 2 3
Gate Drain Source
= P or blank
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
Parameter
Symbol
Max
Unit
ORDERING INFORMATION
Junction ? to ? Case (Drain) – Steady State
R q JC
1.7
° C/W
Device
Package
Shipping ?
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 ″ pad size (Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.41 in 2 ).
NTB5605PT4G D 2 PAK 800 / Tape & Reel
(Pb ? Free)
NTBV5605T4G D 2 PAK 800 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 4
1
Publication Order Number:
NTB5605P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB5605P_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -60 Volt, -18.5 Amp |
| NTB5605PG | 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5605PT4 | 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5605PT4G | 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5605T4G | 功能描述:MOSFET PFET 60V 18.5A TR D2PAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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