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| 型号： | NTD18N06 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 18A DPAK |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 710pF @ 25V |
| 功率 - 最大： | 55W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
NTD18N06
Power MOSFET
18 Amps, 60 Volts
N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
http://onsemi.com
circuits.
Features
? Pb ? Free Packages are Available
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
60 V
G
R DS(on) TYP
51 m W
N ? Channel
D
S
I D MAX
18 A
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 10 M W )
V DSS
V DGR
60
60
Vdc
Vdc
MARKING
DIAGRAMS
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p v 10 ms)
Drain Current
V GS
V GS
" 20
" 30
Vdc
4
DPAK
4
Drain
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
I D
I D
I DM
18
10
54
Adc
Apk
1 2
3
CASE 369C
STYLE 2
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 5.0 Vdc,
L = 1.0 mH, I L (pk) = 12 A, V DS = 60 Vdc)
P D
T J , T stg
E AS
55
0.36
2.1
? 55 to
+175
72
W
W/ ° C
W
° C
mJ
4
DPAK ? 3
CASE 369D
STYLE 2
1
Gate
2
Drain
4
Drain
3
Source
3
Thermal Resistance ° C/W
? Junction ? to ? Case R q JC 2.73
? Junction ? to ? Ambient (Note 1) R q JA 100
? Junction ? to ? Ambient (Note 2) R q JA 71.4
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recom-
mended Operating Conditions is not implied. Extended exposure to stresses
above the Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR ? 4 board using the minimum recommended
pad size.
2. When surface mounted to an FR ? 4 board using the 0.5 sq in drain pad size.
1
2
1 2 3
Gate Drain Source
18N06 = Device Code
Y = Year
WW = Work Week
G = Pb ? Free Device
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 2
1
Publication Order Number:
NTD18N06/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD18N06-001 | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-252AA |
| NTD18N06-1G | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06G | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
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