参数资料
型号: NTD18N06
厂商: ON Semiconductor
文件页数: 9/9页
文件大小: 0K
描述: MOSFET N-CH 60V 18A DPAK
产品变化通告: Discontinuation 30/Jun/2006
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 18A
开态Rds(最大)@ Id, Vgs @ 25° C: 60 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 30nC @ 10V
输入电容 (Ciss) @ Vds: 710pF @ 25V
功率 - 最大: 55W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: DPAK-3
包装: 管件
NTD18N06
PACKAGE DIMENSIONS
DPAK ? 3
CASE 369D ? 01
ISSUE B
V
B
R
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
S
? T ?
SEATING
PLANE
F
1
4
2
3
A
K
J
H
Z
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155 ???
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.45
0.63 1.01
0.89 1.27
3.93 ???
G
D 3 PL
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT :
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082 ? 1312 USA
Phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 Toll Free USA/Canada
Fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 Toll Free USA/Canada
Email : orderlit@onsemi.com
N. American Technical Support : 800 ? 282 ? 9855 Toll Free
USA/Canada
Japan : ON Semiconductor, Japan Customer Focus Center
2 ? 9 ? 1 Kamimeguro, Meguro ? ku, Tokyo, Japan 153 ? 0051
Phone : 81 ? 3 ? 5773 ? 3850
http://onsemi.com
9
ON Semiconductor Website : http://onsemi.com
Order Literature : http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NTD18N06/D
相关PDF资料
PDF描述
ASFLM1-11.0592MHZ-L-C-T OSC MEMS 11.0592 MHZ 3.0V SMD
NTD12N10G MOSFET N-CH 100V 12A DPAK
ASA2-85.909089MHZ-L-T3 OSC 85.909089 MHZ 1.8V SMD
NTD12N10-1G MOSFET N-CH 100V 12A IPAK
ASFLM1-10.000MHZ-L-C-T OSC MEMS 10.000 MHZ 3.0V SMD
相关代理商/技术参数
参数描述
NTD18N06-001 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD18N06-1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-252AA
NTD18N06-1G 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD18N06G 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD18N06G 制造商:ON Semiconductor 功能描述:MOSFET