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参数资料
| 型号： | NTD20N06-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-251AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 20A条（丁）|对251AA |
| 文件页数： | 1/8页 |
| 文件大小： | 55K |
| 代理商： | NTD20N06-1 |
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0
1
Publication Order Number:
NTD20N03L27/D
NTD20N03L27
Power MOSFET
20 Amps, 30 Volts
N–Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain–to–source diode has a ideal fast but soft recovery.
Features
Ultra–Low RDS(on), single base, advanced technology
SPICE parameters available
Diode is characterized for use in bridge circuits
IDSS and VDS(on) specified at elevated temperatures
High Avalanche Energy Specified
ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
Typical Applications
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTD20N03L in many applications
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
VGS
"20
"24
Vdc
Drain Current
– Continuous @ TA = 25_C
– Continuous @ TA = 100_C
– Single Pulse (tpv10 s)
ID
IDM
20
16
60
Adc
Apk
Total Power Dissipation @ TA = 25_C
Derate above 25
°C
Total Power Dissipation @ TC = 25°C
(Note 1.)
PD
74
0.6
1.75
Watts
W/
°C
W
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5 Vdc, L =
1.0 mH, IL(pk) = 24 A, VDS = 34 Vdc)
EAS
288
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
R
θJC
R
θJA
R
θJA
1.67
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
20 AMPERES
30 VOLTS
RDS(on) = 27 m
Device
Package
Shipping
ORDERING INFORMATION
NTD20N03L27
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
PIN ASSIGNMENT
http://onsemi.com
N–Channel
D
S
G
NTD20N03L27–1
DPAK
75 Units/Rail
MARKING
DIAGRAM
20N3L
= Device Code
Y
= Year
WW
= Work Week
YWW
20N3L
1
Gate
3
Source
2
Drain
NTD20N03L27T4
DPAK
2500 Tape & Reel
4
Drain
1
2
3
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD20N06-1G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20N06G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD20N06L | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20N06L-001 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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