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参数资料
| 型号： | NTD20N06-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-251AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 20A条（丁）|对251AA |
| 文件页数： | 2/8页 |
| 文件大小： | 55K |
| 代理商： | NTD20N06-1 |
NTD20N03L27
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 2.)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
–
43
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ =150°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
–
±100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage (Note 2.)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.6
5.0
2.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (Note 2.)
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
RDS(on)
–
28
23
31
27
m
Static Drain–to–Source On–Resistance (Note 2.)
(VGS = 5.0 Vdc, ID = 20 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C)
VDS(on)
–
0.48
0.40
0.54
–
Vdc
Forward Transconductance (Note 2.) (VDS = 5.0 Vdc, ID = 10 Adc)
gFS
–
21
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
1005
1260
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
271
420
Transfer Capacitance
f = 1.0 MHz)
Crss
–
87
112
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
17
25
ns
Rise Time
(VDD = 20 Vdc, ID = 20 Adc,
VGS =50Vdc
tr
–
137
160
Turn–Off Delay Time
VGS = 5.0 Vdc,
RG = 9.1 ) (Note 2.)
td(off)
–
38
45
Fall Time
RG 9.1 ) (Note 2.)
tf
–
31
40
Gate Charge
(V
48 Vd
I
15 Ad
QT
–
13.8
18.9
nC
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 10 Vdc) (Note 2.)
Q1
–
2.8
–
VGS = 10 Vdc) (Note 2.)
Q2
–
6.6
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
1.0
0.9
1.15
–
Vdc
Reverse Recovery Time
trr
–
23
–
ns
(IS =15 Adc VGS = 0 Vdc
ta
–
13
–
(IS =15 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/s) (Note 2.)
tb
–
10
–
Reverse Recovery Stored
Charge
dlS/dt = 100 A/s) (Note 2.)
QRR
–
0.017
–
C
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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