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参数资料
| 型号： | NTD20N06-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-251AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 20A条（丁）|对251AA |
| 文件页数： | 3/8页 |
| 文件大小： | 55K |
| 代理商： | NTD20N06-1 |
NTD20N03L27
http://onsemi.com
3
1.6
1.4
1
1.2
0.8
0.6
10
1
100
1000
24
16
28
12
20
0
40
0.015
0
30
1
15
0.4
0.2
–I
D
,DRAIN
CURRENT
(AMPS)
0
–VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
0.04
0.035
0.03
0.025
22
15
12
0.02
0.015
0.01
0.005
0
525
28
32
Figure 3. On–Resistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
–VDS, DRAIN–TO–SOURCE VOLTAGE (V)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
–I
DSS
,LEAKAGE
(nA)
40
–50
75
50
0
–25
100
150
0.5
1.5
5
028
32
24
20
36
16
40
0.02
0.01
0.025
0.03
012
15
9
618
330
–VDS, DRAIN–TO–SOURCE VOLTAGE (V)
5
10
20
25
35
1.4
2
4
0.6
0.8
1.2
1.6
1.8
1
2
2.5
3
3.5
4
4.5
818
35
38
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(
)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(
)
48
12
125
25
21
24
27
VGS = 10 V
VGS = 8 V
VGS = 6 V
VGS = 5 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
8
32
36
TJ = 25°C
TJ = 100°C
TJ = –55°C
VDS > = 10 V
VGS = 5 V
TJ = 25°C
TJ = 100°C
TJ = –55°C
VGS = 5 V
VGS = 10 V
TJ = 25°C
ID = 10 A
VGS = 5 V
TJ = 100°C
TJ = 125°C
VGS = 0 V
TJ = 25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD20N06-1G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20N06G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD20N06L | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20N06L-001 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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