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| 型号： | NTD4813NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7.6A DPAK |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 860pF @ 12V |
| 功率 - 最大： | 1.27W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD4813N
Power MOSFET
30 V, 40 A, Single N--Channel, DPAK/IPAK
Features
?
Low R DS(on) to Minimize Conduction Losses
?
?
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
http://onsemi.com
? These are Pb--Free Devices
Applications
? CPU Power Delivery
? DC--DC Converters
? High Side Switching
V (BR)DSS
30 V
R DS(ON) MAX
13 m Ω @ 10 V
24 m Ω @ 4.5 V
D
I D MAX
40 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain--to--Source Voltage
Gate--to--Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
G
Continuous Drain
Current R θ JA
(Note 1)
T A = 25 ° C
T A = 85 ° C
I D
9.0
7.0
A
S
N--CHANNEL MOSFET
2 3
3
3
Power Dissipation
R θ JA (Note 1)
Continuous Drain
Current R θ JA
(Note 2)
Power Dissipation
R θ JA (Note 2)
Continuous Drain
Current R θ JC
(Note 1)
Power Dissipation
R θ JC (Note 1)
Pulsed Drain
Current
Steady
State
t p =10 m s
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
P D
ID
P D
I D
P D
I DM
1.94
7.6
5.9
1.27
40
31
35.3
90
W
A
W
A
W
A
1 2 1
4 4
4
1
2
CASE 369AA CASE 369AC CASE 369D
DPAK 3 IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Current Limited by Package
Operating Junction and Storage
Temperature
T A = 25 ° C
I DmaxPkg
T J ,
T STG
35
--55 to
+175
A
° C
4
Drain
4
Drain
4
Drain
Source Current (Body Diode)
Drain to Source dV/dt
I S
dV/dt
29
6
A
V/ns
1
2
3
Source Gate Drain Source
1
2
3
Single Pulse Drain--to--Source Avalanche EAS 72 mJ
Energy (V DD = 24 V, V GS = 10 V,
I L = 12 A pk , L = 1.0 mH, R G = 25 Ω )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate
Y = Year
WW = Work Week
4813N = Device Code
Gate Drain Source
G
= Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 6
1
Publication Order Number:
NTD4813N/D
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| NTD4815N-1G | 功能描述:MOSFET NFET 30V 35A 15MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4815N-35G | 功能描述:MOSFET NFET 30V 35A 15MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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