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参数资料
| 型号： | NTD4813NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7.6A DPAK |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 860pF @ 12V |
| 功率 - 最大： | 1.27W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD4813N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction--to--Case (Drain)
Junction--to--TAB (Drain)
Junction--to--Ambient – Steady State (Note 1)
Junction--to--Ambient – Steady State (Note 2)
Symbol
R θ JC
R θ JC--TAB
R θ JA
R θ JA
Value
4.25
3.5
77.5
118.5
Unit
° C/W
1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
30
24.5
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1
10
m A
Gate--to--Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
5.4
2.5
V
mV/ ° C
Drain--to--Source On Resistance
R DS(on)
V GS = 10 V to
11.5 V
V GS = 4.5 V
I D = 30 A
I D = 15 A
I D = 30 A
10.9
10.3
18.6
13
24
m Ω
I D = 15 A
17.1
Forward Transconductance
g FS
V DS = 15 V, I D = 10 A
6.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
860
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1.0 MHz, V DS = 12 V
V GS = 4.5 V, V DS = 15 V; I D = 30 A
V GS = 11.5 V, V DS = 15 V;
I D = 30 A
201
115
6.9
1.2
3.1
3.6
15.6
7.9
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
t d(ON)
10.5
Rise Time
Turn--Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V, I D = 15 A,
R G = 3.0 Ω
19.3
10.1
3.3
ns
3. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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