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参数资料
| 型号： | NTD4959N-35G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9A IPAK |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 11.5V |
| 输入电容 (Ciss) @ Vds： | 1456pF @ 12V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短截引线，IPak |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD4959NH
Power MOSFET
30 V, 58 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Devices
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
9.0 m W @ 10 V
12.5 m W @ 4.5 V
D
I D MAX
58 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
G
N ? Channel
Gate ? to ? Source Voltage
Continuous Drain
Current (R q JA ) (Note 1)
Power Dissipation
(R q JA ) (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
" 20
11.5
9.0
2.0
V
A
W
4
S
4
3
Continuous Drain
Current (R q JA ) (Note 2)
Power Dissipation
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
I D
P D
I D
9.0
7.0
1.3
58
45
A
W
A
1 2
3
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
1
2
3 IPAK IPAK
CASE 369AD CASE 369D
(Straight Lead) (Straight Lead
DPAK)
Power Dissipation T C = 25 ° C
(R q JC ) (Note 1)
Pulsed Drain Current t p =10 m s T A = 25 ° C
Current Limited by Package T A = 25 ° C
Operating Junction and Storage Temperature
P D
I DM
I DmaxPkg
T J , T stg
52
130
45
? 55 to
175
W
A
A
° C
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
Source Current (Body Diode)
Drain to Source dV/dt
I S
dV/dt
43
6.0
A
V/ns
1
2
3
Source Gate Drain Source
1
2
3
Single Pulse Drain ? to ? Source Avalanche E AS 112.5 mJ
Energy (V DD = 24 V, V GS = 10 V,
L = 1.0 mH, I L(pk) = 15 A, R G = 25 W )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate
Gate Drain Source
Y = Year
WW = Work Week
4959NH= Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2009
May, 2009 ? Rev. 0
1
Publication Order Number:
NTD4959NH/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4959NH | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK |
| NTD4959NH-1G | 功能描述:MOSFET NFET DPAK 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4959NH-35G | 功能描述:MOSFET NFET DPAK 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4959NHT4G | 功能描述:MOSFET NFET DPAK 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4959NT4G | 功能描述:MOSFET NFET DPAK 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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