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| 型号： | NTD5865N-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 34A 18MOHM DPAK |
| 产品目录绘图： | MOSFET IPAK-3 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 38A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1261pF @ 25V |
| 功率 - 最大： | 52W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
| 其它名称： | NTD5865N-1G-ND NTD5865N-1GOS |
NTD5865N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
59.2
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 60 V
T J = 25 ° C
T J = 150 ° C
1.0
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
2.0
8.6
4.0
V
mV/ ° C
Drain ? to ? Source On Resistance
Forward Transconductance
R DS(on)
gFS
V GS = 10 V, I D = 20 A
V DS = 15 V, I D = 20 A
14
6.9
18
m W
S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C iss
1261
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 25 V
136
85
Total Gate Charge
Q G(TOT)
23
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 10 V, V DS = 48 V,
I D = 38 A
1.5
6.7
7.7
Gate Resistance
R G
1.5
W
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
10
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 48 V,
I D = 38 A, R G = 2.5 W
17
20
3.5
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 38 A
T J = 25 ° C
T J = 125 ° C
0.94
0.85
1.2
V
Reverse Recovery Time
t RR
23
ns
Charge Time
Discharge Time
ta
tb
V GS = 0 V, dIs/dt = 100 A/ m s,
I S = 38 A
17
6
Reverse Recovery Charge
Q RR
20
nC
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NTD5865N ? 1G
NTD5865NT4G
Package
DPAK (Straight Lead)
(Pb ? Free)
DPAK
(Pb ? Free)
Shipping ?
75 Units / Rail
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5865NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 60 V, 40 A, 16 mΩ |
| NTD5865NL-1G | 功能描述:MOSFET Single N-CH 60V 40A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5865NLT4G | 功能描述:MOSFET Single N-CH 60V 40A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5865NT4G | 功能描述:MOSFET Single N-CH 60V 38A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5867NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 60 V, 20 A, 39 m |
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