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参数资料
| 型号： | NTD5867NLT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 18A 43MOHM DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 675pF @ 25V |
| 功率 - 最大： | 36W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NTD5867NLT4GOSDKR |
NTD5867NL
N-Channel Power MOSFET
60 V, 20 A, 39 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
http://onsemi.com
R DS(on) MAX
I D MAX
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Gate ? to ? Source Voltage ? Continuous
V GS
Gate ? to ? Source Voltage
V GS
? Non ? Repetitive (t p < 10 m s)
Value
60
" 20
" 30
Unit
V
V
V
60 V
39 m W @ 10 V
50 m W @ 4.5 V
D
20 A
18 A
T C = 25 ° C
Continuous Drain
Current (R q JC )
Power Dissipation
(R q JC )
Pulsed Drain Current
T C = 25 ° C
Steady T C = 100 ° C
State
t p = 10 m s
I D
P D
I DM
20
13
36
76
A
W
A
G
S
N ? CHANNEL MOSFET
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
150
20
° C
A
4
4
3
CASE 369AA
(Surface Mount)
STYLE 2
Single Pulse Drain ? to ? Source Avalanche E AS 18 mJ
Energy (V DD = 50 V, V GS = 10 V, R G = 25 W ,
I L(pk) = 19 A, L = 0.1 mH, T J = 25 ° C)
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1 2
3 1
2
DPAK
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Junction ? to ? Case (Drain) R q JC
Junction ? to ? Ambient ? Steady State (Note 1)
R q JA
Value
3.5
45
Unit
° C/W
& PIN ASSIGNMENT
4
4 Drain
Drain
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Y = Year
WW = Work Week
5867NL = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
September, 2013 ? Rev. 2
1
Publication Order Number:
NTD5867NL/D
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