参数资料
型号: NTD5867NLT4G
厂商: ON Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH 60V 18A 43MOHM DPAK
产品目录绘图: MOSFET DPAK Pkg
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 39 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 10V
输入电容 (Ciss) @ Vds: 675pF @ 25V
功率 - 最大: 36W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
其它名称: NTD5867NLT4GOSDKR
NTD5867NL
TYPICAL PERFORMANCE CURVES
1000
900
800
700
600
V GS = 0 V
T J = 25 ° C
C iss
10
8
6
Q T
V GS
500
400
4
Q gs
Q gd
300
200
100
0
0
C rss
C oss
10
20
30
40
50
60
2
0
0
5
10
V DS = 48 V
I D = 20 A
T J = 25 ° C
15
DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Q G , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? To ? Source Voltage vs.
Total Charge
1000
100
10
V DD = 48 V
I D = 20 A
V GS = 10 V
t f
t d(off)
t r
t d(on)
20
15
10
5
V GS = 0 V
T J = 25 ° C
1
1
10
100
0
0.5
0.6
0.7
0.8
0.9
1.0
100
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
10 m s
20
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
I D = 20 A
10
100 m s
15
1
V GS = 10 V
SINGLE PULSE
T C = 25 ° C
R DS(on) LIMIT
THERMAL LIMIT
1 ms
10 ms
dc
10
5
25
0.1
1
PACKAGE LIMIT
10
100
0
50
75
100
125
150
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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