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参数资料
| 型号： | NTD5867NLT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 18A 43MOHM DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 675pF @ 25V |
| 功率 - 最大： | 36W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NTD5867NLT4GOSDKR |
NTD5867NL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
60
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 60 V
T J = 25 ° C
T J = 125 ° C
1.0
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.5
1.8
2.5
V
Negative Threshold Temperature Coefficient
V GS(TH) /T J
5.2
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 10 A
26
39
m W
V GS = 4.5 V, I D = 10 A
33
50
Forward Transconductance
g FS
V DS = 15 V, I D = 10 A
8.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
Gate Resistance
C iss
C oss
C rss
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
R G
V GS = 0 V, f = 1.0 MHz,
V DS = 25 V
V GS = 10 V, V DS = 48 V,
I D = 20 A
V GS = 4.5 V, V DS = 48 V,
I D = 20 A
675
68
47
15
1.0
2.2
4.3
7.6
1.3
pF
nC
nC
W
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
6.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 48 V,
I D = 20 A, R G = 2.5 W
12.6
18.2
2.4
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 10 A
T J = 25 ° C
T J = 100 ° C
0.87
0.78
1.2
V
Reverse Recovery Time
t RR
17
ns
Charge Time
Discharge Time
ta
tb
V GS = 0 V, dIs/dt = 100 A/ m s,
I S = 20 A
13
4.0
Reverse Recovery Charge
Q RR
12
nC
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NTD5867NL ? 1G
NTD5867NLT4G
Package
IPAK (Straight Lead)
(Pb ? Free)
DPAK
(Pb ? Free)
Shipping ?
75 Units / Rail
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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