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| 型号： | NTD6600N-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 12A IPAK |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 146 毫欧 @ 6A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 700pF @ 25V |
| 功率 - 最大： | 1.28W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD6600N
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Zero Gate Voltage Drain Current
(V GS = 0 Vdc, V DS = 100 Vdc, T J = 25 ° C)
(V GS = 0 Vdc, V DS = 100 Vdc, T J = 125 ° C)
Gate?Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
100
?
?
?
?
?
?
?
?
1.0
10
± 100
Vdc
m Adc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
V DS = V GS, I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain?to?Source On?State Resistance (V GS = 5.0 Vdc, I D = 6.0 Adc)
Drain?to?Source On?Voltage (V GS = 5.0 Vdc, I D = 12 Adc)
Forward Transconductance (V DS = 10 Vdc, I D = 6.0 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
1.0
?
?
?
?
1.5
?4.4
118
1.5
10
2.0
?
146
2.2
?
Vdc
mV/ ° C
m W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
463
700
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
116
36
225
75
SWITCHING CHARACTERISTICS (Notes 4 & 5)
Turn?On Delay Time
t d(on)
?
10.5
20
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 80 Vdc, I D = 6.0 Adc,
V GS = 5.0 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
75
26
50
140
40
90
Total Gate Charge
Q tot
?
11.3
20
nC
Gate?to?Source Charge
Gate?to?Drain Charge
(V DS = 80 Vdc, I D = 6.0 Adc,
V GS = 5.0 Vdc)
Q gs
Q gd
?
?
1.9
7.4
?
?
BODY?DRAIN DIODE RATINGS (Note 4)
Diode Forward On?Voltage
Reverse Recovery Time
(I S = 12 Adc, V GS = 0 Vdc)
(I S = 12 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 12 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
?
?
?
?
0.90
0.80
80
50
1.4
?
?
?
Vdc
ns
t b
?
30
?
Reverse Recovery Stored Charge
Q RR
?
0.240
?
m C
4. Indicates Pulse Test: P.W. = 300 m s max, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
NTD6600N
NTD6600N?1
NTD6600N?1G
NTD6600NT4
NTD6600NT4G
Device
Package
DPAK
DPAK?3
DPAK?3
(Pb?Free)
DPAK
DPAK
Shipping ?
75 Units/Rail
2500 Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
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| NTD6600NT4 | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD6600NT4G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD6N40 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 400V 6A 3-Pin(2+Tab) DPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD6N40/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 6 Amps， 400 Volts |
| NTD6N40-001 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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