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| 型号： | NTD78N03-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 11.4A IPAK |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 78A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2250pF @ 12V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD78N03
Power MOSFET
25 V, 78 A, Single N?Channel, DPAK
Features
? Low R DS(on)
? Optimized Gate Charge
? Pb?Free Packages are Available
http://onsemi.com
Applications
? Desktop VCORE
? DC?DC Converters
? Low Side Switch
V (BR)DSS
25 V
R DS(on) TYP
4.6 @ 10 V
6.5 @ 4.5 V
D
I D MAX
78 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
25
" 20
Unit
V
V
G
N?Channel
Continuous Drain
Current (Note 1)
T C = 25 ° C
T C = 85 ° C
I D
14.8
11.5
A
S
Power Dissipation
T C = 25 ° C
P D
2.3
W
4
4
(Note 1)
4
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Continuous Drain
Current (R q JC )
Power Dissipation
Steady
State
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
I D
P D
11.4
8.8
1.4
78
56
64
A
W
A
W
1 2
3
CASE 369AA
DPAK
(Bend Lead)
STYLE 2
1
2
3
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1
2 3
CASE 369AD
IPAK
(Straight Lead)
(R q JC )
Pulsed Drain Current t p = 10 m s
Current Limited by Package T A = 25 ° C
Drain to Source dV/dt
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain?to?Source Avalanche
Energy (V DD = 24 V, V GS = 10 V,
L = 5.0 mH, I L (pk) = 17 A, R G = 25 W )
I DM
I DmaxPkg
dV/dt
T J , T stg
I S
E AS
210
45
8.0
?55 to 175
78
722.5
A
A
V/ns
° C
A
mJ
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
1 Drain 3
Gate Source Gate Drain Source
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 seconds)
THERMAL RESISTANCE
Junction?to?Case (Drain)
T L
R q JC
260
1.95
° C
° C/W
2
1 2 3
1 2 3
Gate Drain Source
Junction?to?Ambient ? Steady State (Note 1)
Junction?to?Ambient ? Steady State (Note 2)
R q JA
R q JA
65
110
Y
WW
78N03
= Year
= Work Week
= Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
G
= Pb?Free Package
Recommended Operating Conditions may affect device reliability.
1. Surface?mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces).
2. Surface?mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
September, 2006 ? Rev. 6
1
Publication Order Number:
NTD78N03/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD78N0335 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 78 A, Single Na??Channel, DPAK |
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| NTD78N03-35G | 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD78N03G | 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD78N03R | 功能描述:MOSFET 25V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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