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| 型号： | NTD78N03-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 11.4A IPAK |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 78A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2250pF @ 12V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD78N03
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
25
24
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
1.5
m A
V DS = 20 V
T J = 125 ° C
10
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.0
1.6
3.0
V
Negative Threshold Temperature Coefficient
V GS(TH) /T J
?5.0
mV/ ° C
Drain?to?Source On Resistance
R DS(on)
V GS = 10 V, I D = 78 A
4.6
6.0
m W
V GS = 4.5 V, I D = 36 A
6.5
7.8
Forward Transconductance
gFS
V DS = 10 V, I D = 15 A
22
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1920
2250
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
C oss
C rss
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = 12 V
V GS = 4.5 V, V DS = 20 V,
I D = 20 A
960
420
25.5
2.4
5.3
18.2
35
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
11
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 20 V,
I D = 20 A, R G = 3.0 W
68
23
42
ns
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
0.83
1.0
V
I S = 20 A
T J = 125 ° C
0.7
Reverse Recovery Time
t RR
39
Charge Time
Discharge Time
Reverse Recovery Time
ta
tb
Q RR
V GS = 0 V, dIs/d t = 100 A/ m s,
I S = 20 A
17.8
21
33
ns
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
2.49
Drain Inductance
Gate Inductance
Gate Resistance
L D
L G
R G
Ta = 25C
0.02
3.46
1.0
nH
W
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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| NTD78N03R | 功能描述:MOSFET 25V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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