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参数资料
| 型号： | NTE6507 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit NMOS, 8 Bit Microprocessor (MPU) w/On-Chip Clock OSC |
| 中文描述： | 集成电路NMOS管，8位微处理器（微）瓦特/片上时钟振荡器 |
| 文件页数： | 2/4页 |
| 文件大小： | 35K |
| 代理商： | NTE6507 |
DC Characteristics:
(V
CC
= 5V
±
5%, T
A
= 0
°
to +70
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input High Voltage
Logic and
o(in)
Logic
V
IH
+2.0
V
CC
–
0.5
V
CC
V
V
V
CC
+0.25
Input Low Voltage
Logic and
o(in)
Input Loading
RDY
Input Leakage Current
Logic (Excluding RDY)
o(in)
Three
–
State (Off State) Input Current
DB0
–
DB7
V
IL
–
0.3
+0.8
V
I
IL
V
in
= 0V, V
CC
= 5.25V
–
10
–
300
μ
A
I
in
V
in
= 0 to 5.25V, V
CC
= 0
–
–
2.5
10.0
μ
A
μ
A
I
TSI
V
in
= 0.4 to 2.4V, V
CC
= 5.25V
–
±
10
μ
A
Output High Voltage
DB0
–
DB7, A0
–
A15, R/W
Output Low Voltage
DB0
–
DB7, A0
–
A15, R/W
Power Dissipation
V
OH
I
LOAD
=
–
100
μ
A, V
CC
= 4.75V
2.4
–
V
V
OL
I
LOAD
= 1.6mA, V
CC
= 4.75V
–
–
0.4
700
V
P
D
V
CC
= 5.25V
V
in
= 0, T
A
= +25
°
C, f = 1MHz
mW
Capaticance
RES, RDY,
C
in
–
10
pF
DB0
–
DB7
–
15
pF
A0
–
A15, R/W
o(in)
C
out
C
–
12
pF
o(in)
–
15
pF
Dynamic Operating Characteristics:
(V
CC
= 5V
±
5%, T
A
= 0
°
to +70
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
μ
s
ns
Cycle Time
o(in)
Low Time
o(in)
High Time
o
Neg to
1
Pos Delay
o
Neg to
2
Neg Delay
o
Pos to
1
Neg Delay
o
Pos to
2
Pos Delay
α
(in)
Rise and Fall Time
1(OUT)
Pulse Width
T
CYC
T
L
o
T
H
o
T
01+
T
02
–
T
01
–
T
02+
T
RO
, T
FO
T
PWH1
T
PWH2
T
D
T
R
, T
F
1.00
40
Note 2
480
–
Note 2
460
–
ns
Load = 100pF
10
70
ns
Load = 100pF
5
65
ns
Load = 100pF
5
65
ns
Load = 100pF
15
75
ns
Note 3
0
30
ns
T
Lo
–
20
T
Lo
ns
2(OUT)
Pulse Width
T
Lo
–
40
5
T
Lo
–
10
–
ns
Delay Between
1
and
2
1
and
2
Rise and Fall Times
ns
Load = 1TTL load +30pF, Note 3
–
25
ns
Note 2. Measured at 50% points.
Note 3. Measured between 10% and 90% points.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE6508 | 制造商:NTE Electronics 功能描述:IC, SRAM, 1KBIT, SERIAL, 300NS, 16-DIP; Memory Size:1KB; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:DIP; No. of Pins:16; Access Time:300ns; Operating Temperature Min:-40C; Operating Temperature Max:85C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 1K-Bit 1K x 1 300ns 16-Pin PDIP |
| NTE65101 | 制造商:NTE Electronics 功能描述:IC - NMOS 1K SRAM 450NS 22 LEAD DIP 制造商:NTE Electronics 功能描述:IC-CMOS 1K SRAM 制造商:NTE Electronics 功能描述:IC, SRAM, 1KBIT, SERIAL, 450NS, 22-DIP; Memory Size:1Kbit; Memory Configuration:256 x 4; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:22; Access Time:450ns; Operating Temperature Min:-40C 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 1K-Bit 256 x 4-Bit 450ns 22-Pin PDIP |
| NTE652 | 制造商:NTE Electronics 功能描述:CRYSTAL - 4.000 MHZ |
| NTE653 | 制造商:NTE Electronics 功能描述:CRYSTAL-5.000 MHZ |
| NTE6532 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC |
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