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参数资料
| 型号： | NTE6508 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit CMOS, 1K Static RAM (SRAM) |
| 中文描述： | 集成电路的CMOS，每1000静态RAM（SRAM） |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | NTE6508 |
NTE6508
Integrated Circuit
CMOS, 1K Static RAM (SRAM)
Description:
The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using
self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive
high performance and low power operation. On chip latches are provided for address allowing effeci-
ent interfacing with microprocessor systems. The data output buffers can be forced to a high imped-
ance state for use in expanded memory arrays.
Features:
Low Power Standby: 50
μ
W Max
Low Power Operation: 20mW/MHz Max
Fast Access Time: 300ns Max
Data Retention: 2V Min
TTL Compatible Input/Output
High Output Drive: 2 TTL Loads
On–Chip Address Register
Absolute Maximum Ratings:
(Note 1)
Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input, Output or I/O Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Derating Factor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Count
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10s max)
+7V
GND –0.3V to V
CC
+0.3V
1.5mA/MHz increase in I
CC(OP)
1925 Gates
+175
°
C
–65
°
to +150
°
C
+300
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage
to the device. This is a stress only rating and operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not im-
plied. This device is sensitive to electrostatic discharge, users should follow proper IC han-
dling procedures.
Recommended Operating Conditions:
Operating Voltage Range
Operating Temperature Range
+4.5V to +5.5V
–40
°
to +85
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE65101 | 制造商:NTE Electronics 功能描述:IC - NMOS 1K SRAM 450NS 22 LEAD DIP 制造商:NTE Electronics 功能描述:IC-CMOS 1K SRAM 制造商:NTE Electronics 功能描述:IC, SRAM, 1KBIT, SERIAL, 450NS, 22-DIP; Memory Size:1Kbit; Memory Configuration:256 x 4; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:22; Access Time:450ns; Operating Temperature Min:-40C 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 1K-Bit 256 x 4-Bit 450ns 22-Pin PDIP |
| NTE652 | 制造商:NTE Electronics 功能描述:CRYSTAL - 4.000 MHZ |
| NTE653 | 制造商:NTE Electronics 功能描述:CRYSTAL-5.000 MHZ |
| NTE6532 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC |
| NTE654 | 制造商:NTE Electronics 功能描述:Crystal 10.245MHz 32pF 2-Pin |
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