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参数资料
| 型号： | NTE65101 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM) |
| 中文描述： | 集成电路256 × 4位静态随机存取存储器（SRAM） |
| 文件页数： | 1/4页 |
| 文件大小： | 30K |
| 代理商： | NTE65101 |
NTE65101
Integrated Circuit
256 x 4–Bit Static Random Access Memory (SRAM)
Description:
The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type
package. This device offers ultra low power and fully static operation with a single 5V supply. Sepa-
rate data inputs and data outputs permit maximum flexibility in bus–oriented systems. Data retention
at a power supply as low as 2V over temperature readily allows design into applications using battery
backup for nonvolatility. The NTE65101 is fully static and does not require clocking in standby mode.
Features:
Organized as 256 Bytes of 4–Bits
Static Operation
Low Standby Power
Three–State Output
Single 5V Power Supply
Data Retention to 2V
TTL Compatible
Maximum Access Time: 450ns
Absolute Maximum Ratings:
(Voltages referenced to V
SS
Pin8)
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage, V
in
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device contains circuitry to protect the inputs against damage due to high static voltages
or electric fields; however, it is advised that normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high impedance circuit.
–0.5 to +7V
–0.3 to V
CC
+0.3V
–40
°
to +85
°
C
–65
°
to +150
°
C
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