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参数资料
| 型号： | NTE65101 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM) |
| 中文描述： | 集成电路256 × 4位静态随机存取存储器（SRAM） |
| 文件页数： | 2/4页 |
| 文件大小： | 30K |
| 代理商： | NTE65101 |
DC Electrical Characteristics:
(V
CC
= 5V
±
5%, T
A
= 0
°
to +70
°
C unless otherwise specified)
Parameter
Symbol
Input Current
I
in
Note 3
Input High Voltage
V
IH
Input Low Voltage
V
IL
Output High Voltage
V
OH
I
OH
=
–
1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Output Leakage Current
I
LO
CE1 = 2.2V, V
OL
= 0V to V
CC
, Note 3
Operating Current
I
CC1
V
in
= V
CC
, except CE1
≤
0.65V,
Outputs open
I
CC2
V
in
= 2.2V, except CE1
≤
0.65V,
Outputs open
Standby Current
I
CCL
CE2
≤
0.2V, Note 3, Note 4
Test Conditions
Min
–
2.2
–
0.3
2.4
–
–
–
Typ
5.0
–
–
–
–
–
9.0
Max
–
V
CC
0.65
–
0.4
±
1.0
22
Unit
nA
V
V
V
V
μ
A
mA
–
13
27
mA
–
–
10
μ
A
Note 2. Typical values are T
A
= +25
°
C and nominal voltage.
Note 3. Current through all inputs and outputs included in I
CCL
measurement.
Note 4. Low current state is for CE2 = 0 only.
Capacitance:
Parameter
Symbol
C
in
C
out
Test Conditions
Min
–
–
Typ
4.0
8.0
Max
8.0
12.0
Unit
pF
pF
Input Capacitance
Output Capacitance
V
in
= 0V
V
out
= 0V
Note 2. Typical values are T
A
= +25
°
C and nominal voltage.
Low V
CC
Retention Characteristics:
(T
A
= 0
°
to +70
°
C unless otherwise specified)
Parameter
Symbol
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Test Conditions
Min
2.0
–
0
t
RC
Typ
–
0.14
–
–
Max
–
10
–
–
Unit
V
μ
A
ns
ns
V
DR
I
CCDR1
t
CDR
t
R
CE2
≤
0.2V, V
DR
= 2V
Note 5
Note 2. Typical values are T
A
= +25
°
C and nominal voltage.
Note 5. t
RC
= Read Cycle Time.
AC Operating Conditions and Characteristics:
(Full operating voltage and temperature unless
otherwise specified)
AC Test Conditions:
Condition
Value
Input Pulse Levels
Input Rise and Fall Times
Output Load
–
Timing Measurement Reference Level
+0.65V to 2.2V
20ns
1 TTL Gate and C
L
= 100pF
1.5V
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