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参数资料
| 型号： | NTE65101 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM) |
| 中文描述： | 集成电路256 × 4位静态随机存取存储器（SRAM） |
| 文件页数： | 3/4页 |
| 文件大小： | 30K |
| 代理商： | NTE65101 |
AC Operating Conditions and Characteristics (Cont
’
d):
(Full operating voltage and temperature
unless otherwise specified)
Read Cycle:
Parameter
Symbol
t
RC
t
A
Min
450
–
Max
–
450
Unit
ns
ns
Read Cycle Time
Access Time
Read Cycle (Cont
’
d):
Parameter
Symbol
t
AS
t
AH
t
CO1
t
CO2
t
OD
t
DF
t
OH1
t
OH2
Min
20
0
–
–
–
0
0
0
Max
–
–
400
500
250
130
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Address Setup Time
Address Hold Time
Chip Enable (CE1) to Output
Chip Enable (CE2) to Output
Output Disable to Output
Data Output to High Z State
Previous Read Data Valid with Respect to Address Change
Previous Read Data Valid with Respect to Chip Enable
Write Cycle:
Parameter
Symbol
t
WC
t
AW
t
CW1
t
CW2
t
DW
t
DH
t
WP
t
WR
t
DS
Min
450
130
350
350
250
50
250
50
130
Max
–
–
–
–
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle
Write Delay
Chip Enable (CE1) to Write
Chip Enable (CE2) to Write
Data Setup
Data Hold
Write Pulse
Write Recovery
Output Disable Setup
Truth Table:
CE1
H
X
X
L
L
L
CE2
X
L
X
H
H
H
OD
X
X
H
H
L
L
R/W
X
X
H
L
L
H
D
in
X
X
X
X
X
X
Output
High Z
High Z
High Z
High Z
D
in
D
out
Mode
Not Selected
Not Selected
Output Disable
Write
Write
Read
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