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| 型号： | NTF2955T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 1.7A SOT-223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 185 毫欧 @ 2.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 14.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 492pF @ 25V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTF2955T1GOSDKR |
NTF2955, NVF2955
Power MOSFET
? 60 V, ? 2.6 A, Single P ? Channel SOT ? 223
Features
? Design for low R DS(on)
? Withstands High Energy in Avalanche and Commutation Modes
? AEC ? Q101 Qualified ? NVF2955
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Power Supplies
? PWM Motor Control
? Converters
? Power Management
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
? 60 V
G
http://onsemi.com
R DS(on) TYP
145 m W @ ? 10 V
P ? Channel
D
I D MAX
? 2.6 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 60
± 20
V
V
S
MARKING DIAGRAM AND
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 2.6
? 2.0
A
4
PIN ASSIGNMENT
4 Drain
12
G
STYLE 3
2
Drain
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
P D
I D
P D
2.3
? 1.7
? 1.3
1.0
W
A
W
3 AYW
2955 G
SOT ? 223
CASE 318E
1
Gate
A = Assembly Location
3
Source
Pulsed Drain Current tp = 10 m s
Operating Junction and Storage Temperature
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 25 V, V G = 10 V, I PK = 6.7 A,
L = 10 mH, R G = 25 W )
I DM
T J ,
T STG
EAS
? 17
? 55 to
175
225
A
° C
mJ
Y = Year
W = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T L
260
° C
Device
Package
Shipping ?
THERMAL RESISTANCE RATINGS
NTF2955T1G
SOT ? 223
(Pb ? Free)
1000 /Tape & Reel
Parameter
Junction ? to ? Tab (Drain) ? Steady State (Note 2)
Symbol
R q JC
Max
14
Unit
NVF2955T1G
SOT ? 223
(Pb ? Free)
1000/ Tape & Reel
Junction ? to ? Ambient ? Steady State (Note 1) R q JA 65 ° C/W
Junction ? to ? Ambient ? Steady State (Note 2) R q JA 150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127
in 2 [1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in 2 )
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2014
February, 2014 ? Rev. 7
1
Publication Order Number:
N TF2955/D
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相关代理商/技术参数 |
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|---|---|
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| NTF3055-100T1 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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