参数资料
型号: NTF2955T1G
厂商: ON Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 60V 1.7A SOT-223
产品变化通告: Specification Change MSL Updated 2/April/2007
产品目录绘图: MOSFET SOT-223 Pkg
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 1.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 185 毫欧 @ 2.4A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 14.3nC @ 10V
输入电容 (Ciss) @ Vds: 492pF @ 25V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 标准包装
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: NTF2955T1GOSDKR
NTF2955, NVF2955
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
10
8
V GS = ? 10 V to ? 7 V
V GS = ? 6 V
T J = 25 ° C
V GS = ? 5.5 V
10
8
V DS ≥ 10 V
T J = ? 55 ° C
T J = 25 ° C
T J = 125 ° C
6
4
V GS = ? 5 V
6
4
2
V GS = ? 4.5 V
V GS = ? 3.8 V
2
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
? V DS, DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
? V GS, GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.4
0.3
0.2
0.1
V GS = ? 10 V
T J = 125 ° C
T J = 25 ° C
T J = ? 55 ° C
0.25
0.225
0.2
0.175
0.15
0.125
0.1
T J = 25 ° C
V GS = ? 10 V
V GS = ? 15 V
0.075
0
0
2
4
6
8
10
0.05
0
2
4
6
8
10
? I D, DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus Drain Current
and Temperature
? I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
2
1.8
1.6
I D = ? 1.5 A
V GS = ? 10 V
1000
V GS = 0 V
T J = 150 ° C
1.4
1.2
1
0.8
0.6
0.4
0.2
100
T J = 125 ° C
0
? 50
? 25
0
25
50
75
100
125
150
10
5
10
15
20
25
30
35
40
45
50
55
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
? V DS, DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
versus Voltage
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