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| 型号： | NTF2955T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 1.7A SOT-223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 185 毫欧 @ 2.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 14.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 492pF @ 25V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTF2955T1GOSDKR |
NTF2955, NVF2955
ELECTRICAL CHARACTERISTICS (T J =25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
? 60
66.4
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 60 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 50
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = ? 1.0 mA
V GS = ? 10 V, I D = ? 0.75 A
? 2.0
145
? 4.0
170
V
m W
V GS = ? 10 V, I D = ? 1.5 A
V GS = ? 10 V, I D = ? 2.4 A
150
154
180
185
Forward Transconductance
g FS
V GS = ? 15 V, I D = ? 0.75 A
1.77
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = 25 V
V GS = 10 V, V DS = 30 V,
I D = 1.5 A
492
165
50
14.3
1.2
2.3
5.2
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
V GS = 10 V, V DD = 25 V,
I D = 1.5 A, R G = 9.1 W
R L = 25 W
11
7.6
65
38
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 1.5 A
T J = 25 ° C
T J = 125 ° C
? 1.10
? 0.9
? 1.30
V
Reverse Recovery Time
t RR
36
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 1.5 A
20
16
0.139
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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