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参数资料
| 型号： | NTGD1100LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 8V 3.3A 6-TSOP |
| 产品目录绘图： | MOSFET 6-TSOP |
| 标准包装： | 1 |
| 类型： | 通用 |
| 输出数： | 1 |
| Rds（开）： | 55 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 3.3A |
| 输入电压： | 1.8 V ~ 8 V |
| 工作温度： | -50°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 其它名称： | NTGD1100LT1GOSDKR |
NTGD1100L
Power MOSFET
8 V, ± 3.3 A, Load Switch with Level ? Shift,
P ? Channel, TSOP ? 6
The NTGD1100L integrates a P and N ? Channel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
http://onsemi.com
and high load currents are needed. The P ? Channel device is
specifically designed as a load switch using ON Semiconductor
state ? of ? the ? art trench technology. The N ? Channel, with an external
resistor (R1), functions as a level ? shift to drive the P ? Channel. The
N ? Channel MOSFET has internal ESD protection and can be driven
V (BR)DSS
8.0 V
R DS(on) TYP
40 m W @ ? 4.5 V
55 m W @ ? 2.5 V
80 m W @ ? 1.8 V
I D MAX
± 3.3 A
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
SIMPLIFIED SCHEMATIC
applied to both V IN and V ON/OFF
4
2,3
Features
? Extremely Low R DS(on) Load Switch MOSFET
? Level Shift MOSFET is ESD Protected
? Low Profile, Small Footprint Package
? V IN Range 1.8 to 8.0 V
? ON/OFF Range 1.5 to 8.0 V
? ESD Rating of 2000 V
? These Devices are Pb ? Free and are RoHS Compliant
5
1
Q2
Q1
6
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
MARKING DIAGRAM &
PIN ASSIGNMENT
Input Voltage (V DSS , P ? Ch)
ON/OFF Voltage (V GS , N ? Ch)
Continuous Load Current Steady
(Note 1) State
Power Dissipation Steady
(Note 1) State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
V IN
V ON/OFF
I L
P D
8.0
8.0
± 3.3
± 2.4
0.83
0.43
V
V
A
W
1
TSOP ? 6
CASE 318G
STYLE 11
D1/G2
6
1
S1
G1 S2
5 4
TZ M G
G
2 3
D2 D2
Pulsed Load Current
tp = 10 m s
I LM
± 10
A
TZ
= Specific Device Code
Operating Junction and Storage Temperature
T J ,
T STG
? 55 to
150
° C
M
G
= Date Code*
= Pb ? Free Package
Source Current (Body Diode)
ESD Rating, MIL ? STD ? 883D HBM
(100 pF, 1.5 k W )
I S
ESD
? 1.0
2.0
A
kV
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Device Package Shipping ?
NTGD1100LT1G TSOP ? 6 3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
April, 2013 ? Rev. 10
1
Publication Order Number:
NTGD1100L/D
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