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参数资料
| 型号： | NTGD1100LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 8V 3.3A 6-TSOP |
| 产品目录绘图： | MOSFET 6-TSOP |
| 标准包装： | 1 |
| 类型： | 通用 |
| 输出数： | 1 |
| Rds（开）： | 55 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 3.3A |
| 输入电压： | 1.8 V ~ 8 V |
| 工作温度： | -50°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 其它名称： | NTGD1100LT1GOSDKR |
NTGD1100L
THERMAL RESISTANCE RATINGS
Rating
Junction ? to ? Ambient – Steady State (Note 2)
Junction ? to ? Foot – Steady State (Note 2)
Symbol
R m JA
R m JF
Max
150
50
Unit
° C/W
2. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Q2 Drain ? to ? Source Breakdown Voltage
V IN
V GS2 = 0 V, I D2 = ? 250 m A
8.0
V
Forward Leakage Current
I FL
V GS1 = 0 V,
V DS1 = 8.0 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Q2 Gate ? to ? Source Leakage Current
I GSS
V DS2 = 0 V, V GS2 = ± 8.0 V
± 100
nA
Q2 Diode Forward On ? Voltage
V SD
I S = ? 1.0 A, V GS2 = 0 V
? 0.7
? 1.0
V
ON CHARACTERISTICS
Voltage ON/OFF
V ON/OFF
1.5
8.0
V
Q1 Gate Threshold Voltage
Input Voltage
V GS1
V IN
V GS1 = V DS1 , I D = 50 m A
V GS2 = V DS2 , I D = 250 m A
0.6
1.8
1.2
8.0
V
V
Q2 Drain ? to ? Source On Resistance
R DS(on)
V ON/OFF = 1.5 V,
I L = 1.0 A
V IN = 4.5 V
V IN = 2.5 V
40
55
55
70
m W
V IN = 1.8 V
80
140
Load Current
I L
V DROP ≤ 0.2 V, V IN = 5.0 V,
V ON/OFF = 1.5 V
1.0
A
V DROP ≤ 0.2 V, V IN = 2.5 V,
V ON/OFF = 1.5 V
V DROP ≤ 0.2 V, V IN = 1.8 V,
V ON/OFF = 1.5 V
1.0
1.0
V IN
R1
4
Q2
2,3
C1
V OUT
6
6
ON/OFF
5
Q1
C O
LOAD
C I
R2
1
R2
Figure 1. Load Switch Application
GND
Components
R1
R2
C0
C1
Description
Pullup Resistor
Optional Slew ? Rate Control
Output Capacitance
Optional In ? Rush Current Control
http://onsemi.com
2
Values
Typical 10 k W to 1.0 M W
Typical 0 to 100 k W
Usually < 1.0 m F
Typical ≤ 1000 pF
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