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| 型号： | NTGS3447PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 3.4A 6-TSOP |
| 产品变化通告： | Product Obsolescence 19/Dec/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 4.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1053pF @ 6V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGS3447P
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t v 5 s (Note 3)
Junction-to-Ambient – Minimum Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Value
100
78
188
Unit
° C/W
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = -250 m A
-12
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
-1.0
m A
V DS = -12 V
T J = 85 ° C
-5.0
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8 V
$ 0.1
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Drain-to-Source On Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = -250 m A
V GS = -4.5 V, I D = -4.7 A
-0.45
30
-1.0
40
V
m W
V GS = -2.5 V, I D = -4.1 A
V GS = -1.8 V, I D = -2.0 A
40
53
53
72
Forward Transconductance
g FS
V DS = -5 V, I D = -4.7 A
12
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
1053
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = -6 V
254
129
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = -4.5 V, V DS = -6 V;
I D = -4.7 A
10.4
1.0
1.7
0.4
15
nC
SWITCHING CHARACTERISTICS , V GS = 4.5 V (Note 6)
Turn-On Delay Time
t d(ON)
7
11
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = -4.5 V, V DS = -6 V,
I D = -1.0 A, R G = 6.0 W
14
78
47
22
117
71
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
-0.7
-1.2
V
I S = -1.7 A
Reverse Recovery Time
t RR
V GS = 0 V, dI SD /d t = 100 A/ m s,
33
66
ns
I S = -1.7 A
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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