参数资料
型号: NTHD4401P
厂商: ON SEMICONDUCTOR
英文描述: Power MOSFET 20 V, Dual P-Channel, 2.1 A(2.1A,20V,双P通道的功率MOSFET)
中文描述: 功率MOSFET 20,双P V型频道,2.1(2.1A,20V的,双P通道的功率MOSFET的)
文件页数: 3/6页
文件大小: 74K
代理商: NTHD4401P
NTHD4401P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
2 V
100
°
C
0
4
5
3
6
3
2
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
D
D
2
1
0
1
Figure 1. OnRegion Characteristics
0.5
4
2
1.5
2.5
3
2
1
1
0
3
Figure 2. Transfer Characteristics
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
0.1
3
5
0.3
0.2
0
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
R
D
D
D
D
0.5
4.5
0.15
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
50
0
25
25
1.4
1.2
1
0.8
0.6
50
125
100
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
0.5
2
4
T
C
= 55
°
C
I
D
= 2.1 A
T
J
= 25
°
C
0.25
0.1
75
150
T
J
= 25
°
C
I
D
= 2.1 A
V
GS
= 4.5 V
R
D
D
R
4
25
°
C
R
D
D
1.6
V
GS
= 4.5 V
1.2 V
1
6
1.4 V
1.6 V
1.8 V
0.225
0.125
0.2
V
GS
= 2.5 V
7
8
2.2 V
V
DS
10 V
0.4
1.5
2.5
3.5
0.175
V
GS
= 2.4 V
V
GS
= 6 V to 3 V
0.8
50
1
1.2
25
0
25
50
75
100
125
150
R
D
D
R
T
J
, JUNCTION TEMPERATURE (
°
C)
I
D
= 1.0 A
V
GS
= 1.8 V
Figure 6. OnResistance Variation with
Temperature
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