参数资料
型号: NTHD4401P
厂商: ON SEMICONDUCTOR
英文描述: Power MOSFET 20 V, Dual P-Channel, 2.1 A(2.1A,20V,双P通道的功率MOSFET)
中文描述: 功率MOSFET 20,双P V型频道,2.1(2.1A,20V的,双P通道的功率MOSFET的)
文件页数: 6/6页
文件大小: 74K
代理商: NTHD4401P
NTHD4401P
http://onsemi.com
6
PACKAGE DIMENSIONS
ChipFET
CASE 1206A03
ISSUE G
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
E
A
b
e
e1
D
1
2
3
4
8
7
6
5
c
L
1
2
3
4
8
7
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
0.05 (0.002)
DIM
A
b
c
D
E
e
e1
L
H
E
MIN
1.00
0.25
0.10
2.95
1.55
NOM
1.05
0.30
0.15
3.05
1.65
0.65 BSC
0.55 BSC
0.35
1.90
5
°
NOM
MAX
1.10
0.35
0.20
3.10
1.70
MIN
0.039
0.010
0.004
0.116
0.061
MILLIMETERS
INCHES
NOM
0.28
1.80
0.42
2.00
0.011
0.071
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.014
0.075
5
°
NOM
0.043
0.014
0.008
0.122
0.067
0.017
0.079
MAX
H
E
ON Semiconductor
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone
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NTHD4401P/D
ChipFET is a trademark of Vishay Siliconix.
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NTHD4401P/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Powe MOSFET 20 V Dual P Channel 2.1 A ChipFET?
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NTHD4401PT1 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD4401PT1G 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD4401PT3 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube