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参数资料
| 型号： | NTHD4401P |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 20 V, Dual P-Channel, 2.1 A(2.1A，20V，双P通道的功率MOSFET) |
| 中文描述： | 功率MOSFET 20，双P V型频道，2.1（2.1A，20V的，双P通道的功率MOSFET的） |
| 文件页数： | 4/6页 |
| 文件大小： | 74K |
| 代理商： | NTHD4401P |
NTHD4401P
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
V
DS
= 0 V
V
GS
= 0 V
V
GS
5
10
10
600
300
200
100
0
20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C
0
2
6
1
4
1
0
Q
g
, TOTAL GATE CHARGE (nC)
G
G
T
J
= 25
°
C
C
oss
C
iss
C
rss
I
D
= 2.1 A
T
J
= 25
°
C
QT
500
3
2.5
2
3
D
D
12
10
8
2
0
Q2
Q1
10
1
10
1
100
R
G
, GATE RESISTANCE (OHMS)
t
V
DD
= 16 V
I
D
= 2.1 A
V
GS
= 4.5 V
100
5
0
400
5
4
6
t
d(off)
t
d(on)
t
f
t
r
V
GS
V
DS
V
DS
15
1.5
0.5
3.5
0.9
0.5
0
0.3
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
S
,
V
GS
= 0 V
T
J
= 25
°
C
2.5
0.7
0.5
1
1.5
2
2
4
8
10
20
16
Figure 7. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
12
V
GS
= 0 V
D
,
T
J
= 150
°
C
T
J
= 100
°
C
100
1000
10000
6
10
18
14
Figure 8. Capacitance Variation
Figure 9. GatetoSource and
DraintoSource Voltage vs. Total Charge
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
Figure 11. Diode Forward Voltage vs. Current
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| NTHD4401P/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Powe MOSFET 20 V Dual P Channel 2.1 A ChipFET? |
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| NTHD4401PT3 | 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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