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参数资料
| 型号： | NTHD4P02FT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET and Schottky Diode |
| 中文描述： | 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, CASE 1206A-03, CHIPFET-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 74K |
| 代理商： | NTHD4P02FT1G |
NTHD4P02F
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
Max
Units
°
C/W
JunctiontoAmbient (Note 1)
Steady State
T = 25
°
C
110
t
5 s
JA
60
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
I
DSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= 16 V, V
GS
= 0 V, T
J
= 25
°
C
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85
°
C
V
DS
= 0 V, V
GS
=
±
12 V
20
23
V
Zero Gate Voltage Drain Current
1.0
A
5.0
±
100
GatetoSource Leakage Current
I
GSS
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= 250 A
V
GS
= 4.5, I
D
= 2.2 A
V
GS
= 2.5, I
D
= 1.7 A
V
DS
= 10 V, I
D
= 1.7 A
0.6
0.75
1.2
V
DraintoSource On Resistance
0.130
0.155
0.200
0.240
Forward Transconductance
g
FS
5.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 0 V f
V
DS
= 10 V
1 0 MH
185
300
pF
Output Capacitance
95
150
Reverse Transfer Capacitance
30
50
Total Gate Charge
3.0
6.0
nC
Threshold Gate Charge
V
GS
= 4.5 V, V
= 10 V,
I
D
= 2.2 A
0.2
GatetoSource Charge
0.5
GatetoDrain Charge
0.9
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
7.0
12
ns
Rise Time
V
GS
= 4.5 V, V
DD
= 16 V,
I
D
= 2.2 A, R
G
= 2.5
13
25
TurnOff Delay Time
33
50
Fall Time
27
40
DRAINSOURCE DIODE CHARACTERISTICS
(Note 2)
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
0.85
1.15
V
Reverse Recovery Time
tRR
32
ns
Charge Time
ta
V
GS
= 0 V, I
= 2.1 A ,
dI
S
/dt = 100 A/ s
10
Discharge Time
tb
22
Reverse Recovery Charge
QRR
15
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
V
Test Conditions
Min
Typ
Max
Units
V
Maximum Instantaneous Forward Voltage
I
F
= 0.1 A
I
F
= 0.5 A
I
F
= 1.0 A
V
R
= 10 V
V
R
= 20 V
V
R
= 20 V
0.425
F
0.480
0.510
0.575
Maximum Instantaneous Reverse Current
I
R
1.0
A
5.0
Maximum Voltage Rate of Change
dv/dt
10,000
V/ns
NonRepetitive Peak Surge Current
I
FSM
Halfwave, Single Pulse, 60 Hz
23
A
2. Pulse Test: Pulse Width
3. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
2%.
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