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参数资料
| 型号： | NTHD4P02FT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET and Schottky Diode |
| 中文描述： | 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, CASE 1206A-03, CHIPFET-8 |
| 文件页数： | 5/8页 |
| 文件大小： | 74K |
| 代理商： | NTHD4P02FT1G |
NTHD4P02F
http://onsemi.com
5
TYPICAL SCHOTTKY PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
10
0.20
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
I
F
,
C
1
0.1
Figure 12. Typical Forward Voltage
Figure 13. Maximum Forward Voltage
10
1E6
100E9
10E9
Figure 14. Typical Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
I
R
R
Figure 15. Maximum Reverse Current
25
3
2
2.5
1
0
65
125
105
Figure 16. Current Derating
T
L
, LEAD TEMPERATURE (
°
C)
T
J
= 150
°
C
1E3
T
J
= 25
°
C
85
165
freq = 20 kHz
I
O
3.5
20
0
1
0
3.5
3
Figure 17. Forward Power Dissipation
I
O
, AVERAGE FORWARD CURRENT (AMPS)
2
P
F
,
0.2
1.8
0.40
0.5
1.5
2.5
0.60
0.80
0
T
J
= 25
°
C
T
J
= 55
°
C
10
0.20
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
I
F
,
C
1
0.1
T
J
= 150
°
C
0.40
0.60
0.80
T
J
= 25
°
C
10E6
T
J
= 100
°
C
T
J
= 150
°
C
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
0
I
R
M
1.5
0.5
45
145
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io =
square wave
dc
1
1.6
0.4
0.6
0.8
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io =
square wave
dc
1.4
1.2
100E6
10E3
1E3
100E6
10E+0
T
J
= 25
°
C
100E3
T
J
= 100
°
C
T
J
= 150
°
C
1E+0
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