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| 型号： | NTHD4P02FT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET and Schottky Diode |
| 中文描述： | 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, CASE 1206A-03, CHIPFET-8 |
| 文件页数： | 6/8页 |
| 文件大小： | 74K |
| 代理商： | NTHD4P02FT1G |
NTHD4P02F
http://onsemi.com
6
Figure 18. Basic
Figure 19. Style 3
0.457
0.018
2.032
0.08
0.66
0.026
0.254
0.010
mm
inches
SCALE 20:1
1.092
0.043
0.178
0.007
0.711
0.028
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.711
0.028
mm
inches
SCALE 20:1
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 18. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area,
particularly for the drain leads.
The minimum recommended pad pattern shown in
Figure 19 improves the thermal area of the drain
connections (pins 5, 6) while remaining within the confines
of the basic footprint. The drain copper area is 0.0019 sq.
in. (or 1.22 sq. mm). This will assist the power dissipation
path away from the device (through the copper leadframe)
and into the board and exterior chassis (if applicable) for
the single device. The addition of a further copper area
and/or the addition of vias to other board layers will
enhance the performance still further.
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| NTHD5903T1-D | Circular Connector; Body Material:Aluminum; Series:PT01; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket; Insert Arrangement:8-4 |
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相关代理商/技术参数 |
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| NTHD5902T1 | 功能描述:MOSFET 2N-CH 30V 2.9A CHIPFET RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| NTHD5902T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET Dual N-Channel ChipFET? |
| NTHD5903T1 | 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5903T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET Dual P-Channel ChipFET? |
| NTHD5903T1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET |
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