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参数资料
| 型号： | NTHD5903T1-D |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT01; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket; Insert Arrangement:8-4 |
| 中文描述： | 功率MOSFET双P沟道ChipFET的 |
| 文件页数： | 2/8页 |
| 文件大小： | 69K |
| 代理商： | NTHD5903T1-D |
NTHD5903T1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction–to–Ambient (Note 2)
t
5 sec
Steady State
R
thJA
50
90
60
110
°
C/W
Maximum Junction–to–Foot (Drain)
Steady State
R
thJF
30
40
°
C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–0.6
–
–
V
Gate–Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
–
–
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –16 V, V
GS
= 0 V
–
–
–1.0
A
V
DS
= –16 V, V
GS
= 0 V,
T
J
= 85
°
C
–
–
–5.0
On–State Drain Current (Note 3)
I
D(on)
V
DS
–5.0 V, V
GS
= –4.5 V
–10
–
–
A
Drain–Source On–State Resistance (Note 3)
r
DS(on)
V
GS
= –4.5 V, I
D
= –2.1 A
–
0.130
0.155
V
GS
= –3.6 V, I
D
= –2.0 A
–
0.150
0.180
V
GS
= –2.5 V, I
D
= –1.7 A
–
0.215
0.260
Forward Transconductance (Note 3)
g
fs
V
DS
= –10 V, I
D
= –2.1 A
–
5.0
–
S
Diode Forward Voltage (Note 3)
V
SD
I
S
= –0.9 A, V
GS
= 0 V
–
–0.8
–1.2
V
Dynamic
(Note 4)
Total Gate Charge
Q
g
V
DS
= –10 V, V
GS
= –4.5 V,
I
D
= –2.1 A
10 V V
4 5 V
–
3.0
6.0
nC
Gate–Source Charge
Q
gs
–
0.9
–
Gate–Drain Charge
Q
gd
–
0.6
–
Turn–On Delay Time
t
d(on)
–
13
20
ns
Rise Time
t
r
V
DD
= –10 V, R
L
= 10
–1 0 A V
= –4 5 V
–1.0 A, V
GEN
= –4.5 V,
= 6
R
G
6
I
D
–
35
55
Turn–Off Delay Time
t
d(off)
–
25
40
Fall Time
t
f
–
25
40
Source–Drain Reverse Recovery Time
2. Surface Mounted on 1
″
x 1
″
FR4 Board.
3. Pulse Test: Pulse Width
4. Guaranteed by design, not subject to production testing.
t
rr
I
F
= –0.9 A, di/dt = 100 A/ s
–
40
80
300 s, Duty Cycle
2%.
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