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参数资料
| 型号： | NTHD5903T1-D |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT01; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket; Insert Arrangement:8-4 |
| 中文描述： | 功率MOSFET双P沟道ChipFET的 |
| 文件页数： | 8/8页 |
| 文件大小： | 69K |
| 代理商： | NTHD5903T1-D |
NTHD5903T1
http://onsemi.com
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to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
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and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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NTHD5903T1/D
ChipFET is a trademark of Vishay Siliconix.
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相关PDF资料 |
PDF描述 |
|---|---|
| NTHD5903 | Power MOSFET Dual P-Channel 2.2 A, 20 V(2.2A，20V，双P通道的功率MOSFET) |
| NTHS2101P | −8.0 V, −7.5 A P−Channel ChipFET |
| NTHS2101PT1 | −8.0 V, −7.5 A P−Channel ChipFET |
| NTHS2101PT1G | −8.0 V, −7.5 A P−Channel ChipFET |
| NTHS4101P | 20 V, P-Channel Power MOSFET ChipFET Single Package(20V，单P通道，ChipFET封装的功率MOSFET) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD5903T1G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET |
| NTHD5904N_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET |
| NTHD5904NT1 | 功能描述:MOSFET 20V 4.5A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904NT1G | 功能描述:MOSFET 20V 4.5A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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