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| 型号： | NTHD5903T1-D |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT01; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket; Insert Arrangement:8-4 |
| 中文描述： | 功率MOSFET双P沟道ChipFET的 |
| 文件页数： | 4/8页 |
| 文件大小： | 69K |
| 代理商： | NTHD5903T1-D |
NTHD5903T1
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
V
DS
= 0 V
V
GS
= 0 V
–V
GS
8
4
–12
12
600
300
200
100
0
20
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
C
0
2
6
1
4
4
1
0
Figure 8. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
–
G
G
T
J
= 25
°
C
C
oss
C
iss
C
rss
I
D
= –2.1 A
T
J
= 25
°
C
QT
500
3
2.5
2
3
–
D
D
6
5
4
1
0
Q2
Q1
10
1
10
1
100
R
G
, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
t
V
DD
= –10 V
I
D
= –1.0 A
V
GS
= –4.5 V
100
–8
0
400
5
2
3
t
d(off)
t
f
t
d(on)
t
r
V
GS
V
DS
–V
DS
–4
16
1.5
0.5
3.5
0.8
0
1
0
1.2
V
SD
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
I
S
,
V
GS
= 0 V
T
J
= 25
°
C
5
1
0.6
0.4
0.2
2
3
4
2
1
0.1
0.01
10
10
10
–4
–3
–2
–1
10
1
10
100
600
Square Wave Pulse Duration (sec)
N
T
Duty Cycle = 0.5
0.2
Single Pulse
0.1
0.05
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90
°
C/W
3. T
JM –
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t1
t2
PDM
Notes:
t1
t2
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
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相关代理商/技术参数 |
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|---|---|
| NTHD5903T1G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET |
| NTHD5904N_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET |
| NTHD5904NT1 | 功能描述:MOSFET 20V 4.5A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904NT1G | 功能描述:MOSFET 20V 4.5A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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