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| 型号： | NTJD2152PT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 8V DUAL ESD SOT-363 |
| 标准包装： | 10,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 8V |
| 电流 - 连续漏极(Id) @ 25° C： | 775mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 570mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 225pF @ 8V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
NTJD2152P
ELECTRICAL CHARACTERISTIC S (T J =25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
V(BR)DSS/
T J
I DSS
I GSS
V GS = 0 V, I D = ? 250 m A
V GS = 0 V, V DS = ? 6.4 V
V DS = 0 V, V GS = ± 8.0 V
? 8.0
? 10.5
? 6.0
1.0
10
V
mV/ ° C
m A
m A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , ID = ? 250 m A
? 0.45
? 0.83
? 1.0
V
Gate Threshold Temperature
Coefficient
V GS(TH) /T J
2.2
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 0.57 A
0.22
0.3
W
V GS = ? 2.5 V, I D = ? 0.48 A
V GS = ? 1.8 V, I D = ? 0.20 A
0.32
0.51
0.46
0.9
Forward Transconductance
g FS
V GS = ? 4.0 V, I D = ? 0.57 A
2.0
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
V GS = 0 V, f = 1.0 MHz,
V DS = ? 8.0 V
V GS = ? 4.5 V, V DS = ? 5.0 V,
I D = ? 0.6 A
160
38
28
2.2
0.1
225
55
40
4.0
pF
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
SWITCHING CHARACTERISTICS (Note 3)
Q GS
Q GD
0.5
0.5
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
td (ON)
tr
td (OFF)
tf
V GS = ? 4.5 V, V DD = ? 4.0 V,
I D = ? 0.5 A, R G = 8.0 W
13
23
50
36
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 0.23 A
T J = 25 ° C
T J = 125 ° C
0.76
0.63
1.1
V
Reverse Recovery Time
t RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = ? 0.77 A
78
ns
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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相关代理商/技术参数 |
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| NTJD3158C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected |
| NTJD3158CT1G | 功能描述:MOSFET 20V .63A/-.82A 630mA COMPLEMENTARY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD3158CT2G | 功能描述:MOSFET COMP SC88D 20V 630MA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD3158CT4G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected |
| NTJD4001N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET |
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