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| 型号： | NTJD4152PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 20V 880MA SOT-363 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 880mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 260 毫欧 @ 880mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 450mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 155pF @ 20V |
| 功率 - 最大： | 272mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTJD4152PT1GOSDKR |
NTJD4152P
Trench Small Signal
MOSFET
20 V, 0.88 A, Dual P ? Channel,
ESD Protected SC ? 88
Features
? Leading Trench Technology for Low R DS(ON) Performance
? Small Footprint Package (SC70 ? 6 Equivalent)
? ESD Protected Gate
? This is a Pb ? Free Device
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) Typ
215 m W @ ? 4.5 V
345 m W @ ? 2.5 V
I D Max
? 0.88 A
Applications
? Load/Power Management
? Charging Circuits
? Load Switching
? Cell Phones, Computing, Digital Cameras, MP3s and PDAs
S 1
1
600 m W @ ? 1.8 V
6
D 1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Value
Unit
G 1
2
5
G 2
Drain ? to ? Source Voltage
V DSS
? 20
V
Gate ? to ? Source Voltage
V GS
± 12
V
D 2
3
4
S 2
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
I D
P D
? 0.88
? 0.63
0.272
0.141
A
W
Top View
MARKING DIAGRAM &
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
t v 5s
t v 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
t ≤ 10 m s
I D
P D
I DM
? 1.0
? 0.72
0.35
0.181
± 3.0
A
W
A
1
SC ? 88/SOT ? 363
CASE 419B
STYLE 28
PIN ASSIGNMENT
D1 G2 S2
6
TK M G
G
Operating Junction and Storage Temperature
T J ,
T STG
? 55 to
150
° C
1
S1 G1 D2
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I S
T L
? 0.48
260
A
° C
TK
M
G
= Device Code
= Date Code
= Pb ? Free Package
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Symbol Max Unit
Junction ? to ? Ambient – Steady State R q JA 460 ° C/W
Junction ? to ? Ambient ? t v 5 s R q JA 357
Junction ? to ? Lead – Steady State R q JL 226
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), steady state.
2. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
NTJD4152PT1G SOT ? 363 3000 / Tape & Reel
(Pb ? Free)
NTJD4152PT2G SOT ? 363 3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2014
January, 2014 ? Rev. 5
1
Publication Order Number:
NTJD4152P/D
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| NTJD4158C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88 |
| NTJD4158CT1G | 功能描述:MOSFET PFET 20V .88A 1OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4158CT2G | 功能描述:MOSFET PFET 20V .88A 1OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4401N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection |
| NTJD4401N_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection |
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