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| 型号： | NTJD4152PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 20V 880MA SOT-363 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 880mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 260 毫欧 @ 880mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 450mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 155pF @ 20V |
| 功率 - 最大： | 272mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTJD4152PT1GOSDKR |
NTJD4152P
ELECTRICAL CHARACTERISTIC S (T J =25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = ? 250 m A
? 20
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = ? 16 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 1.0
? 5.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 4.5 V
0.03
1.0
m A
ON CHARACTERISTICS (Note 3)
V DS = 0 V, V GS = ± 12 V
6.0
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = ? 250 m A
V GS = ? 4.5 V, I D = ? 0.88 A
? 0.45
215
? 1.2
260
V
m W
V GS = ? 2.5 V, I D = ? 0.71 A
V GS = ? 1.8 V, I D = ? 0.20 A
345
600
500
1000
Forward Transconductance
g FS
V DS = ? 10 V, I D = ? 0.88 A
3.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
155
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ? 20 V
25
18
Total Gate Charge
Q G(TOT)
2.2
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 10 V,
I D = ? 0.88 A
0.5
0.65
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
5.8
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 0.5 A, R G = 20 W
6.5
13.5
3.5
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 0.48 A
T J = 25 ° C
T J = 125 ° C
? 0.8
? 0.66
? 1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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