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| 型号： | NTJD4158CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CHAN COMPL SOT-363 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V，20V |
| 电流 - 连续漏极(Id) @ 25° C： | 250mA，880mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 10mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 33pF @ 5V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 其它名称： | NTJD4158CT1GOSDKR |
NTJD4158C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 3)
Drain ? to ? Source
Breakdown Voltage
Drain ? to ? Source Breakdown
Voltage Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
N
P
N
P
V GS = 0 V
I D = 250 m A
I D = ? 250 m A
30
? 20
33
? 9.0
V
mV/
° C
Zero Gate Voltage Drain Current
I DSS
N
P
V GS = 0 V, V DS = 30 V
V GS = 0 V, V DS = ? 16 V
T J = 25 ° C
1.0
1.0
m A
N
P
V GS = 0 V, V DS = 30 V
V GS = 0 V, V DS = ? 16 V
T J = 125 ° C
0.5
0.5
Gate ? to ? Source Leakage Current
I GSS
N
V DS = 0 V, V GS = 10 V
1.0
m A
ON CHARACTERISTICS (Note 2)
P
V DS = 0 V, V GS = ? 4.5 V
1.0
Gate Threshold Voltage
V GS(TH)
N
P
V GS = V DS
I D = 100 m A
I D = ? 250 m A
0.8
? 0.45
1.2
1.5
V
Negative Gate Threshold
Temperature Coefficient
V GS(TH) /
T J
N
P
3.2
? 2.7
mV/
° C
Drain ? to ? Source On Resistance
R DS(on)
N
V GS = 4.5 V, I D = 10 mA
1.0
1.5
W
P
N
P
V GS = ? 4.5 V, I D = ? 0.88 A
V GS = 2.5 V, I D = 10 mA
V GS = ? 2.5 V, I D = ? 0.71 A
0.215
1.5
0.345
0.260
2.5
0.500
Forward Transconductance
g FS
N
V DS = 3.0 V, I D = 10 mA
0.08
S
P
CHARGES, CAPACITANCES AND GATE RESISTANCE
V DS = ? 10 V, I D = ? 0.88 A
3.0
Input Capacitance
C ISS
N
V DS = 5.0 V
20
33
pF
P
V DS = ? 20 V
155
225
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
N
P
N
f = 1 MHz, V GS = 0 V
V DS = 5.0 V
V DS = ? 20 V
V DS = 5.0 V
19
25
7.25
32
40
12
P
V DS = ? 20 V
18
30
Total Gate Charge
Q G(TOT)
N
V GS = 5.0 V, V DS = 24 V, I D = 0.1 A
0.9
1.5
nC
P
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 0.88 A
2.2
3.5
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
N
P
N
P
N
P
V GS = 5.0 V, V DS = 24 V, I D = 0.1 A
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 0.88 A
V GS = 5.0 V, V DS = 24 V, I D = 0.1 A
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 0.88 A
V GS = 5.0 V, V DS = 24 V, I D = 0.1 A
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 0.88 A
0.2
0.2
0.3
0.5
0.2
0.65
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
N
V GS = 4.5 V, V DD = 5.0 V,
I D = 250 mA, R G = 50 W
15
66
56
78
ns
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
P
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 0.5 A, R G = 20 W
5.8
6.5
13.5
3.5
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
N
P
V GS = 0 V, T J = 25 ° C
I S = 10 mA
I S = ? 0.48 A
0.65
? 0.8
0.7
? 1.2
V
N
P
V GS = 0 V, T J = 125 ° C
I S = 10 mA
I S = ? 0.48 A
0.45
? 0.66
Reverse Recovery Time
t RR
N
V GS = 0 V, d IS /d t = 8.0 A/ m s
I S = 10 mA
12.4
ns
P
V GS = 0 V, d IS /d t = 100 A/ m s
I S = ? 0.48 mA
TBD
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
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