- 您现在的位置：买卖IC网 > Datasheet目录489 > NTJS3151PT1G (ON Semiconductor)MOSFET P-CH 12V 2.7A SOT-363 Datasheet资料下载
参数资料
| 型号： | NTJS3151PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 2.7A SOT-363 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 400mV @ 100µA |
| 闸电荷(Qg) @ Vgs： | 8.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 850pF @ 12V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTJS3151PT1GOSDKR |
NTJS3151P
Trench Power MOSFET
12 V, 3.3 A, Single P ? Channel,
ESD Protected SC ? 88
Features
? Leading Trench Technology for Low R DS(ON) Extending Battery Life
? SC ? 88 Small Outline (2x2 mm, SC70 ? 6 Equivalent)
? Gate Diodes for ESD Protection
? Pb ? Free Packages are Available
Applications
? High Side Load Switch
? Cell Phones, Computing, Digital Cameras, MP3s and PDAs
V (BR)DSS
? 12 V
http://onsemi.com
R DS(on) Typ
45 m W @ ? 4.5 V
67 m W @ ? 2.5 V
133 m W @ ? 1.8 V
SC ? 88 (SOT ? 363)
I D Max
? 3.3 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Units
D
1
6
D
Drain ? to ? Source Voltage
V DSS
? 12
V
D
2
5
D
Gate ? to ? Source Voltage
V GS
± 12
V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
? 2.7
? 2.0
? 3.3
0.625
A
W
G
3
Top View
4
D
S
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I DM
T J ,
T STG
I S
T L
? 8.0
? 55 to
150
? 0.8
260
A
° C
A
° C
G
3 k W
S
SC ? 88/SOT ? 363
G
1
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Symbol Max Units
Junction ? to ? Ambient – Steady State R q JA 200 ° C/W
Junction ? to ? Ambient ? t ≤ 5 s R q JA 141
Junction ? to ? Lead – Steady State R q JL 102
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
CASE 419B
STYLE 28
TJ = Device Code
M = Date Code
MARKING DIAGRAM &
PIN ASSIGNMENT
D D S
6
TJ M G
D D G
G
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 2
1
Publication Order Number:
NTJS3151/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTJS3157NT4G | MOSFET N-CH 20V 3.2A SOT-363 |
| NTJS4151PT1 | MOSFET P-CH 20V 3.3A SOT-363 |
| NTJS4160NT1G | MOSFET N-CH 30V 1.8A SC88-6 |
| NTJS4405NT4G | MOSFET N-CH 25V 1A SOT-363 |
| NTK3043NT5G | MOSFET N-CH 20V 210MA SOT-723 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJS3151PT2 | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3151PT2G | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3157N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 |
| NTJS3157NT1 | 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3157NT1G | 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。