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| 型号： | NTJS4160NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.8A SC88-6 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 2.6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.75nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 230pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-88 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTJS4160NT1GOSCT |
NTJS4160N
Power MOSFET
30 V, 3.2 A, Single N-Channel, SC-88
G
Features
? Offers an Low R DS(on) Solution in the SC-88 Package
? Low Profile (< 1.1 mm) Allows it to fit Easily into Extremely Thin
Environments such as Portable Electronics
? Operates at Standard Logic Level Gate Drive
? Low Gate Charge
? This is a Pb-Free Device
Applications
? DC-DC Converters (Buck and Boost Circuit)
? Optimized for Battery Powered Portable Equipment such as,
Cell Phones, PDAs, Media Players, etc.
? Load Management
? Battery Charging and OV IC Protection Circuits
http://onsemi.com
V (BR)DSS R DS(on) TYP I D Max
45 m W @ 10 V
30 V 3.2 A
65 m W @ 4.5 V
MARKING DIAGRAM
6
1 T7 M G
SC-88 (SOT 363)
CASE 419B
1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
STYLE 28
Parameter
Drain-to-Source Voltage
Symbol
V DSS
Value
30
Unit
V
T7 = Device Code
M = Date Code
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
Steady
State
t ≤ 1s
Steady
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
± 20
2.6
1.9
3.2
0.62
V
A
W
G = Pb-Free Package
(Note: Microdot may be in either location)
SC-88
(SOT-363)
(Note 1)
State
t ≤ 1s
T A = 25 ° C
0.95
D
1
6
D
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
1.8
1.3
0.3
A
W
D
2
5
D
Pulsed Drain Current
t p = 10 m s
I DM
10
A
G
3
4
S
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T J ,
T STG
I S
T L
-55 to
150
1.3
260
° C
A
° C
Top View
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Device
NTJS4160NT1G
Package
SC-88
Shipping ?
3000 Units/Reel
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size.
(Pb-Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 1
1
Publication Order Number:
NTJS4160N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJS4405N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88 |
| NTJS4405NT1 | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405NT1G | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405NT4 | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405NT4G | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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