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| 型号： | NTJS4160NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.8A SC88-6 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 2.6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.75nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 230pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-88 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTJS4160NT1GOSCT |
NTJS4160N
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient - t ≤ 1 s (Note 3)
Junction-to-Ambient – Steady State (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
200
132
420
Unit
° C/W
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
I D = 250 m A, ref to 25 ° C
30
20
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
1.0
m A
V DS = 24 V
T J = 125 ° C
10
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = +20 V
100
nA
ON CHARACTERISTICS (Note 5)
V DS = 0 V, V GS = -20 V
-200
Gate Threshold Voltage
Gate Threshold Temperature
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
0.8
-5.0
2.4
V
mV/ ° C
Coefficient
Drain-to-Source On Resistance
R DS(on)
V GS = 10 V, I D = 2.6 A
45
60
m W
V GS = 4.5 V, I D = 2.2 A
65
85
Forward Transconductance
g FS
V GS = 5.0 V, I D = 3.0 A
4.2
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
230
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 10 V
62
39
Total Gate Charge
Q G(TOT)
2.75
nC
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V,
I D = 2.6 A
0.37
0.87
1.1
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t d(ON)
8.7
15
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 15 V,
I D = 1.0 A, R G = 6.0 W
7.2
10.9
1.9
13
19
4.0
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
0.79
1.2
V
I S = 1.3 A
T J = 125 ° C
0.67
Reverse Recovery Time
t RR
10.3
ns
Charge Time
Discharge Time
T a
T b
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 1.3 A
7.2
3.1
Reverse Recovery Charge
Q RR
4.0
nC
5. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJS4405N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88 |
| NTJS4405NT1 | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405NT1G | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405NT4 | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405NT4G | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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