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| 型号： | NTJS4160NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.8A SC88-6 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 2.6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.75nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 230pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-88 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTJS4160NT1GOSCT |
NTJS4160N
PACKAGE DIMENSIONS
SC-88 (SOT-363)
CASE 419B-02
ISSUE W
D
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.
STYLE 28:
MILLIMETERS
INCHES
H E
6
1
5
2
4
3
-E-
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
DIM
A
A1
A3
b
C
MIN NOM MAX
0.80 0.95 1.10
0.00 0.05 0.10
0.20 REF
0.10 0.21 0.30
0.10 0.14 0.25
MIN NOM MAX
0.031 0.037 0.043
0.000 0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
D
E
1.80 2.00 2.20
1.15 1.25 1.35
0.070 0.078 0.086
0.045 0.049 0.053
b 6 PL
e
L
0.65 BSC
0.10 0.20 0.30
0.026 BSC
0.004 0.008 0.012
0.2 (0.008)
M
E
M
H E
2.00 2.10 2.20
0.078 0.082 0.086
A
A3
C
SOLDERING FOOTPRINT*
0.50
0.0197
A1
L
0.40
0.0157
1.9
0.65
0.025
0.65
0.025
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTJS4160N/D
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| NTJS4405N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88 |
| NTJS4405NT1 | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405NT1G | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405NT4 | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405NT4G | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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