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| 型号： | NTJS3151PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 2.7A SOT-363 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 400mV @ 100µA |
| 闸电荷(Qg) @ Vgs： | 8.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 850pF @ 12V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTJS3151PT1GOSDKR |
NTJS3151P
PACKAGE DIMENSIONS
SC ? 88/SC70 ? 6/SOT ? 363
CASE 419B ? 02
ISSUE W
D
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B ? 01 OBSOLETE, NEW STANDARD 419B ? 02.
H E
6
1
5
2
4
3
? E ?
b 6 PL
0.2 (0.008)
A
M
E
M
A3
L
C
MILLIMETERS
DIM MIN NOM MAX
A 0.80 0.95 1.10
A1 0.00 0.05 0.10
A3 0.20 REF
b 0.10 0.21 0.30
C 0.10 0.14 0.25
D 1.80 2.00 2.20
E 1.15 1.25 1.35
e 0.65 BSC
L 0.10 0.20 0.30
H E 2.00 2.10 2.20
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
INCHES
MIN NOM MAX
0.031 0.037 0.043
0.000 0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
A1
0.40
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTJS3151P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJS3151PT2 | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3151PT2G | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3157N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 |
| NTJS3157NT1 | 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3157NT1G | 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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