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| 型号： | NTJS4151PT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.3A SOT-363 |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 850pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTJS4151PT1OSCT |
NTJS4151P
Trench Power MOSFET
? 20 V, ? 4.2 A, Single P ? Channel, SC ? 88
Features
? Leading Trench Technology for Low R DS(ON) Extending Battery Life
? SC ? 88 Small Outline (2x2 mm) for Maximum Circuit Board
Utilization, Same as SC ? 70 ? 6
? Gate Diodes for ESD Protection
? Pb ? Free Package is Available
Applications
? High Side Load Switch
? Cell Phones, Computing, Digital Cameras, MP3s and PDAs
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) Typ
47 m W @ ? 4.5 V
70 m W @ ? 2.5 V
180 m W @ ? 1.8 V
SC ? 88 (SOT ? 363)
I D Max
? 4.2 A
D
1
6
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 20
Unit
V
D
2
5
D
Gate ? to ? Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
V GS
I D
± 12
? 3.3
? 2.4
V
A
G
3
Top View
4
S
t ≤ 5s
T A = 25 ° C
? 4.2
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
1.0
W
MARKING DIAGRAM &
PIN ASSIGNMENT
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I DM
T J ,
T STG
I S
T L
? 10
? 55 to
150
? 1.3
260
A
° C
A
° C
1
SC ? 88/SOT ? 363
CASE 419B
6
1
D
D
D
TY M G
G
D
S
G
ESD
Human Body Model (HBM)
ESD
4000
V
TY
= Device Code
THERMAL RESISTANCE RATINGS (Note 1)
M
G
= Date Code
= Pb ? Free Package
Parameter
Junction ? to ? Ambient – Steady State
Junction ? to ? Ambient ? t ≤ 5 s
Symbol
R q JA
R q JA
Max
125
75
Unit
° C/W
(Note: Microdot may be in either location)
ORDERING INFORMATION
3000 / Tape & Reel
NTJS4151PT1G
Junction ? to ? Lead – Steady State R q JL 45
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Device Package Shipping ?
NTJS4151PT1 SC ? 88 3000 / Tape & Reel
SC ? 88
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
February, 2006 ? Rev. 1
1
Publication Order Number:
NTJS4151P/D
相关PDF资料 |
PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJS4151PT1G | 功能描述:MOSFET -20V -4.2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4160N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTJS4160NT1G | 功能描述:MOSFET NFET 30V 3.2A 60MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4405N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88 |
| NTJS4405NT1 | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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