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| 型号： | NTK3134NT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 750MA SOT-723 |
| 产品变化通告： | 1Q2012 Discontinuation 30/Mar/2012 |
| 标准包装： | 8,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 350 毫欧 @ 890mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 120pF @ 16V |
| 功率 - 最大： | 310mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-723 |
| 供应商设备封装： | SOT-723 |
| 包装： | 带卷 (TR) |
NTK3134N
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t = 5 s (Note 3)
Junction ? to ? Ambient – Steady State Minimum Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
280
228
400
Unit
° C/W
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface mounted on FR4 board using the minimum recommended pad size
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown
Voltage
Drain ? to ? Source Breakdown
Voltage Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
I D = 250 m A, Reference to 25 ° C
20
18
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 16 V
T J = 25 ° C
T J = 125 ° C
1.0
2.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 4.5 V
± 0.5
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
0.45
2.4
1.2
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.5 V, I D = 890 mA
0.20
0.35
W
V GS = 2.5 V, I D = 780 mA
V GS = 1.8 V, I D = 700 mA
V GS = 1.5 V, I D = 200 mA
0.26
0.43
0.56
0.45
0.65
1.2
Forward Transconductance
g FS
V DS = 10 V, I D = 800 mA
1.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = 16 V
79
13
9.0
120
20
15
pF
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 6)
Turn On Delay Time
Rise Time
TurnOff Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 10 V, I D = 500 mA,
R G = 10 W
6.7
4.8
17.3
7.4
ns
DRAIN SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 350 mA
T J = 25 ° C
0.75
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t RR
t a
t b
Q RR
V GS = 0 V, d ISD /d t = 100 A/ m s,
I S = 1.0 A, V DD = 20 V
8.1
6.4
1.7
3.0
ns
nC
5. Pulse Test: pulse width = 300 m s, duty cycle = 2%
6. Switching characteristics are independent of operating junction temperatures
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相关代理商/技术参数 |
参数描述 |
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| NTK3134NT5H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3139P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 |
| NTK3139PT1G | 功能描述:MOSFET 20V/6V P CH T1 780mA 0.4 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3139PT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTK3139PT5G | 功能描述:MOSFET 20V/6V P CH T1 780mA 0.4 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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