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| 型号： | NTLJD2104PTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 12V 4.3A 6WDFN |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 800mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 467pF @ 6V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJD2104P
Power MOSFET
? 12 V, ? 4.3 A, m COOL E Dual P ? Channel,
2x2 mm, WDFN package
Features
? WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
? Lowest R DS(on) in 2x2 mm Package
? Footprint Same as SC ? 88 Package
? Low Profile (<0.8 mm) for Easy Fit in Thin Environments
? Bidirectional Current Flow with Common Source Configuration
? These are Pb ? Free Devices
Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment
? Li Ion Battery Charging and Protection Circuits
? Dual High Side Load Switch
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
? 12 V
http://onsemi.com
R DS(on) TYP
60 m W @ ? 4.5 V
85 m W @ ? 2.5 V
110 m W @ ? 1.8 V
140 m W @ ? 1.5 V
190 m W @ ? 1.3 V
230 m W @ ? 1.2 V
S1
I D MAX
? 3.0 A
? 3.0 A
? 0.7 A
? 0.5 A
? 0.2 A
? 0.2 A
S2
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 12
± 8.0
V
V
G1
G2
D1
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
Steady
State
t ≤ 5s
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
T J = 25 ° C
I D
P D
? 3.5
? 2.5
? 4.3
1.5
2.3
A
W
D1
P ? CHANNEL MOSFET
D2
D2
P ? CHANNEL MOSFET
MARKING
DIAGRAM
2 JCM G 5
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
T J = 25 ° C
Steady T J = 85 ° C
State
T J = 25 ° C
t p = 10 m s
I D
P D
I DM
? 2.4
? 1.7
0.7
? 20
A
W
A
WDFN6
CASE 506AN
Pin 1
JC = Specific Device Code
M = Date Code
1 6
3 G 4
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J , T STG
I S
T L
? 55 to
150
? 1.5
260
° C
A
° C
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm 2 , 2 oz. Cu.
S1
G1
D2
1
2
3
D2
D1
6
5
4
D1
G2
S2
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
October, 2008 ? Rev. 2
1
Publication Order Number:
NTLJD2104P/D
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