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| 型号： | NTMD4820NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 4.9A 8-SOIC |
| 产品变化通告： | Wire Change 29/Aug/2008 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 940pF @ 15V |
| 功率 - 最大： | 750mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NTMD4820NR2GOSDKR |
NTMD4820N
Power MOSFET
30 V, 8 A, Dual N ? Channel, SOIC ? 8
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Dual SOIC ? 8 Surface Mount Package Saves Board Space
Applications
? Disk Drives
? DC ? DC Converters
? Printers
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) Max
20 m W @ 10 V
27 m W @ 4.5 V
N ? Channel
D
I D Max
8A
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
Continuous Drain
Current R q JA (Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
6.4
5.1
1.28
A
W
G
S
Current R q JA (Note 2)
T A = 25 ° C
Continuous Drain T A = 25 ° C
Steady T A = 70 ° C
Power Dissipation State
R q JA (Note 2)
Continuous Drain T A = 25 ° C
Current R q JA t < 10 s
(Note 1) T A = 70 ° C
Power Dissipation T A = 25 ° C
R q JA t < 10 s (Note 1)
Pulsed Drain Current T A = 25 ° C,
t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
I D
P D
I D
P D
I DM
T J , T STG
I S
4.9
3.9
0.75
8.0
6.4
2.0
32
? 55 to
+150
2.0
A
W
A
W
A
° C
A
8
1
4820N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
D1 D1 D2 D2
8
SOIC ? 8 4820N
CASE 751 AYWW
STYLE 11 G
1
S1 G1 S2 G2
G = Pb ? Free Package
Single Pulse Drain ? to ? Source Avalanche
Energy T J = 25C, V DD = 30 V, V GS = 10 V,
I L = 11 A pk , L = 1.0 mH, R G = 25 W
EAS
60.5
mJ
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
Device
Package
Shipping ?
THERMAL RESISTANCE RATINGS
NTMD4820NR2G
SOIC ? 8
2500/Tape & Reel
Rating
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – t ≤ 10 s (Note 1)
Junction ? to ? FOOT (Drain)
Junction ? to ? Ambient – Steady State (Note 2)
Symbol
R q JA
R q JA
R q JF
R q JA
Max
97.5
62
40
167.5
Unit
° C/W
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface ? mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2009
August, 2009 ? Rev. 2
1
Publication Order Number:
NTMD4820N/D
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相关代理商/技术参数 |
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| NTMD4840N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.5 A, Dual N−Channel, SOIC−8 |
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