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| 型号： | NTMD4840NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 4.5A 8-SOIC |
| 产品变化通告： | Wire Change 29/Aug/2008 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 6.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 520pF @ 15V |
| 功率 - 最大： | 680mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NTMD4840NR2GOSDKR |
NTMD4840N
Power MOSFET
30 V, 7.5 A, Dual N ? Channel, SOIC ? 8
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Dual SOIC ? 8 Surface Mount Package Saves Board Space
? This is a Pb ? Free Device
Applications
? Disk Drives
? DC ? DC Converters
? Printers
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) Max
24 m W @ 10 V
36 m W @ 4.5 V
N ? Channel
D
I D Max
7.5 A
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
Continuous Drain
Current R q JA (Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
5.5
4.4
1.14
A
W
G
S
Current R q JA (Note 2)
T A = 70 ° C
Current R q JA t < 10 s
Continuous Drain T A = 25 ° C
Steady
Power Dissipation State T A = 25 ° C
R q JA (Note 2)
Continuous Drain T A = 25 ° C
(Note 1) T A = 70 ° C
Power Dissipation T A = 25 ° C
R q JA t < 10 s (Note 1)
Pulsed Drain Current T A = 25 ° C,
t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 7.5 A pk , L = 1.0 mH, R G = 25 W
I D
P D
I D
P D
I DM
T J , T STG
I S
EAS
4.5
3.5
0.68
7.5
6.0
1.95
30
? 55 to
+150
2.0
28
A
W
A
W
A
° C
A
mJ
8
1
4840N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
D1 D1 D2 D2
8
SOIC ? 8 4840N
CASE 751 AYWW
STYLE 11 G
1
S1 G1 S2 G2
G = Pb ? Free Package
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
THERMAL RESISTANCE RATINGS
T L
260
° C
ORDERING INFORMATION
Shipping ?
Device
Package
Rating
Symbol
Max
Unit
NTMD4840NR2G
SOIC ? 8
2500/Tape & Reel
Junction ? to ? Ambient – Steady State (Note 1)
R q JA
110
(Pb ? Free)
° C/W
Junction ? to ? Ambient – t ≤ 10 s (Note 1) R q JA 64
Junction ? to ? FOOT (Drain) R q JF 40
Junction ? to ? Ambient – Steady State (Note 2) R q JA 183.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2009
September, 2009 ? Rev. 1
1
Publication Order Number:
NTMD4840N/D
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相关代理商/技术参数 |
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|---|---|
| NTMD4884NF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
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| NTMD4N03 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 4 A, 30 V, Na??Channel SOa??8 Dual |
| NTMD4N03R2 | 功能描述:MOSFET 30V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMD4N03R2G | 功能描述:MOSFET 30V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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